Analysis of noise spectra in GaAs and GaN Schottky barrier diodes

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of n...

AlGaN/GaN Schottky Barrier Diodes Employing Diamond-like Carbon passivation

AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes

Dynamic characterization (Pulsed I-V) on Au-free AlGaN/GaN Schottky Barrier Diodes (SBDs) has been performed to evaluate the impact of negative quiescent bias on the forward characteristics. Results show an increase of on-resistance when more negative quiescent biases are applied, and a sudden current collapse phenomenon when the quiescent bias exceeds -175 V. Furthermore, the measurements show...

Magnetotransport in ferromagnetic Schottky diodes made of Mn-doped GaAs

Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits

P. Shiktorov, E. Starikov, V. Gružinskis, L. Varani, J.C. Vaissière, L. Reggiani, S. Pérez and T. González Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania CEM2 — Centre d’Electronique et de Micro-optoelectronique de Montpellier (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France INFM — National Nanotechnology Laboratory, Dipartimento di Ingegner...